Secondary Ion Mass Spectrometry SIMS XI

This volume contains 252 contributions presented as plenary,invited and contributed poster and oral presentations at the 11thInternational Conference on Secondary Ion Mass Spectrometry (SIMSXI) held at the Hilton Hotel, Walt Disney World Village, Orlando,Florida, 7 12 September, 1997. The book covers a diverse range ofresearch, reflecting the rapid growth in advanced semiconductorcharacterization, ultra shallow depth profiling, TOF-SIMS and thenew areas in which SIMS techniques are being used, for example inbiological sciences and organic surface characterization. Papersare presented under the following categories:<br> * Isotopic SIMS<br> * Biological SIMS<br> * Semiconductor Characterization Techniques and Applications<br> * Ultra Shallow Depth Profiling<br> * Depth Profiling Fundamental/Modelling and Diffusion<br> * Sputter-Induced Topography<br> * Fundamentals of Molecular Desorption<br> * Organic Materials<br> * Practical TOF-SIMS<br> * Polyatomic Primary Ions<br> * Materials/Surface Analysis<br> * Postionization<br> * Instrumentation<br> * Geological SIMS<br> * Imaging<br> * Fundamentals of Sputtering<br> * Ion Formation and Cluster Formation<br> * Quantitative Analysis Environmental/ParticleCharacterization<br> * Related Techniques<br> These proceedings provide an invaluable source of reference forboth newcomers to the field and experienced SIMS users.